Silicon suboxide films (SiOx) can be structured by laser irradiation in manifold ways. Besides film ablation and film transfer, a laser induced transformation process resulting in a complex geometry is possible. A controlled, reproducible forming will be accomplished, if on top of the SiOx-film (coated on a transparent fused silica substrate) a polymeric superstrate (confinement layer) is deposited. Thus, rear side irradiation of the film through the substrate leads to partial melting of the SiOx-film and subsequent resolidification in a well-defined shape. An unrestricted melt movement leading to irregular patterns is prevented by this confinement. Precondition for a complete forming of the film is a combination of absorption coefficient and thickness of the SiOx-film resulting in “melting”, i.e. a sufficient reduction of the viscosity across the whole film thickness. According to film- and irradiation parameters, a variety of shapes can be obtained like humps, blisters, cups, or grids of SiOx-material. A special feature of these grids is the undiminished adhesion of the film in the non-irradiated areas and the undercut straps in between, which cannot be produced by conventional laser or etch processes. Pure quartz grids are obtained by subsequent high temperature annealing (oxidation of SiOx to SiO2). Various applications in the fields of optics, micro and nano fluidics, or life science are imaginable.
J. Ihlemann, R. Weichenhain-Schriever:
Pulsed laser-induced formation of silica nanogrids Nanoscale Research Letters 9, 102 (2014)
T. Fricke-Begemann, J. Meinertz, R. Weichenhain-Schriever, J. Ihlemann:
Silicon suboxide (SiOx): laser processing and applications Appl. Phys. A 117, 13 (2014)
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Laser-Laboratorium Göttingen e.V. (LLG)
Head of the Department
Dr. Peter Simon
"Short Pulses / Nanostructures"
Contact person for
Nano Structure Technology:
Dr. Jürgen Ihlemann