Silicon nanocrystals (Si-NC) are of interest as integrated light emitters in silicon based photonics. They are mainly fabricated by high temperature annealing of substoichiometric SiOx, also known as silicon-rich silicon oxide, leading to a phase separation into Si and SiO2. Strong visible to infrared photoluminescence of clusters and nanocrystals is attributed to quantum confinement and defect states at the boundary between nanocrystal and surrounding matrix. Compared to conventional furnace annealing, laser annealing offers the possibility to generate nanocrystals locally controlled. Furthermore, the thermal load of the substrate can be reduced, thereby allowing materials and components that do not permit high temperatures. The main problem of the laser annealing process is the collateral damage of the film structure, ruling out this process for device fabrication up to now. Applying a continuous wave laser emitting at 405 nm for laser induced phase separation in SiOx films, the formation of Si-nanocrystals in substrate bound films without degrading the optically smooth surface has been accomplished. Such conditions are necessary for fabricating devices like waveguides for photonic applications.


Futher Information:

T. Fricke-Begemann, N. Wang, P. Peretzki, M. Seibt, J. Ihlemann:
Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiOx films
Journal of Applied Physics 118, 124308 (2015)

N. Wang, T. Fricke-Begemann, P. Peretzki, J. Ihlemann, M. Seibt:
Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation,
Journal of Applied Physics 123, 093104 (2018)



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Laser-Laboratorium Göttingen e.V. (LLG)

Contact person

Head of the Department
Dr. Peter Simon
"Short Pulses / Nanostructures"

Tel.: +49(0)551/5035-21
FAX: +49(0)551/5035-99

Contact person for
Nano Structure Technology:

Dr. Jürgen Ihlemann
Tel.: +49(0)551/5035-44
FAX: +49(0)551/5035-99